Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

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eBook:

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ToC:

Table of contents

Editors:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

DOI:

https://doi.org/10.4028/b-SO1x84

THEMA:

TGM

BISAC:

TEC021000

Keywords:

3C-SiC, 4H-SiC, 6H-SiC, Atomic Force Microscope (AFM), Bipolar Junction Transistor (BJT), Bulk Growth, Chemical Vapor Deposition (CVD), Defect, Dislocation, DLTS, Epitaxial Growth, EPR, Gallium Nitride (GaN), Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Ohmic Contact, Photoluminescence (PL), PiN Diode, Schottky Diode, Stacking Fault

Details:

Proceedings of the International Conference on Silicon Carbide and Related Materials – 2005, Pittsburgh, Pennsylvania, USA, September 18-23, 2005

Pages:

1670

Year:

2006

ISBN-13:

9780878494255

ISBN-13 (CD):

9783035719192

ISBN-13 (eBook):

9783038130536

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