Books by Keyword: Epitaxial Growth

Books

Edited by: Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
Online since: September 2024
Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).
Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen and Prof. Ulrike Grossner
Online since: June 2023
Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.
Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen, Prof. Ulrike Grossner, Prof. Steven Y. Liang and Prof. Zongjin Li
Online since: May 2023
Description: This special issue includes results of research and engineering developments in the area of applied materials and technologies for machinery, biomedical application, additive production and power electronics. The special edition will be useful to engineers whose activity is related to the research and development of composite materials, biomaterials and the production of power electronic devices.
Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen, Prof. Ulrike Grossner and Dr. Hock Jin Quah
Online since: May 2023
Description: The special edition includes articles that represented the latest research results and engineering solutions in the area of electronic device design and production. This special edition will be interesting to specialists in semiconductor power device production, microelectronics and optoelectronics.
Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen, Prof. Ulrike Grossner, Hamada Shoukry and Dr. Azher M. Abed
Online since: May 2023
Description: This special edition includes articles that reflected the results of the latest research in semiconductors for power electronics, special steel coatings, properties of shape memory alloys and building materials such as cement, concrete and materials for intumescent coatings of structural steel for fire protection. This special edition will be helpful to specialists in the electronics industry and materials science in particular in the area of building materials.
Edited by: Dr. Juraj Marek, Dr. Gregor Pobegen, Prof. Ulrike Grossner, Hamada Shoukry and Dr. Zhigang Fang
Online since: May 2023
Description: The special edition includes articles that represented the latest research results and engineering solutions in the synthesis of nanomaterials, analysis processes of semiconductor wafer fabrication, and some decisions on coatings and exploration of tribological performance of several polymer and composite materials. This special edition will be interesting to specialists in nanomaterials synthesis, semiconductor power device production and protective coatings in machinery.
Edited by: Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier and Prof. Dominique Planson
Online since: May 2022
Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Edited by: Min Lu
Online since: November 2020
Description: These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.
Edited by: Dr. Hiroshi Yano, Prof. Takeshi Ohshima, Dr. Kazuma Eto, Dr. Shinsuke Harada, Dr. Takeshi Mitani and Dr. Yasunori Tanaka
Online since: July 2020
Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.
Edited by: Prof. Peter Michael Gammon, Vishal A. Shah, Prof. Richard A. McMahon, Michael R. Jennings, Dr. Oliver James Vavasour, Faye Padfield and Prof. Philip Andrew Mawby
Online since: July 2019
Description: This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.
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