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Books by Keyword: Epitaxial Growth
Books
Edited by:
Didier Chaussende and Gabriel Ferro
Online since: June 2015
Description: Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
Edited by:
Robert P. Devaty, Prof. Michael Dudley, T. Paul Chow and Dr. Philip G. Neudeck
Online since: May 2012
Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by:
Anton J. Bauer, Peter Friedrichs, M. Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Online since: April 2010
Description: The 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) was held at the Congress Center, Nürnberg (CCN), Germany from October 11 to 16, 2009. This was a truly important and exciting event in the history of wide-bandgap semiconductors, as 503 scientists and engineers from 29 countries reported and discussed the progress made during the previous two years.
Edited by:
Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Online since: September 2008
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Japan is currently the most active country among those carrying out research into the rapidly expanding sphere of Electroceramics; a field that holds tremendous promise for expanding or opening-up a wide range of high-tech applications.
Japan is currently the most active country among those carrying out research into the rapidly expanding sphere of Electroceramics; a field that holds tremendous promise for expanding or opening-up a wide range of high-tech applications.
Edited by:
Katsutoshi Komeya, Yohtaro Matsuo and Takashi Goto
Online since: August 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Materials science is a key field in science and technology, and is indispensable for providing the groundwork for the next technological generation. Ceramics, in particular, advanced rapidly during the 20th century. Although current society now faces numerous difficulties with regard to recycling, energy conservation, environmental pollution and safety/reliability issues, ceramics are sure to play an important role in overcoming them.
Materials science is a key field in science and technology, and is indispensable for providing the groundwork for the next technological generation. Ceramics, in particular, advanced rapidly during the 20th century. Although current society now faces numerous difficulties with regard to recycling, energy conservation, environmental pollution and safety/reliability issues, ceramics are sure to play an important role in overcoming them.
Edited by:
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Online since: October 2006
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Edited by:
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Online since: May 2005
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Edited by:
Peder Bergman and Erik Janzén
Online since: September 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
Edited by:
T. Kimura, T. Takenaka, S. Fujitsu and K. Shinozaki
Online since: August 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Japan is the most active country in carrying out research on Electroceramics. This research field is also rapidly expanding, and has tremendous implications for a wide range of high-tech applications.
Japan is the most active country in carrying out research on Electroceramics. This research field is also rapidly expanding, and has tremendous implications for a wide range of high-tech applications.
Edited by:
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Online since: May 2000
Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.