Engineering Research
Materials Science
Engineering Series
Silicon Carbide and Related Materials 2014
Description:
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
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Info:
Review from Ringgold Inc., ProtoView:
This volume collects 243 papers from the 10th European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), held in Grenoble, France, in September 2014, where researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, diamond, and related materials like graphene. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices and circuits, such as diodes and field effect transistors; and related materials, including other carbide-based materials and nitrides. Contributors are materials scientists and other researchers from around the world.
Ringgold Subjects:
— Carbon
— Engineering
— Materials science