Books by Keyword: Wide Bandgap Semiconductor

Books

Edited by: Prof. Victor Veliadis and Dr. Arash Salemi
Online since: September 2025
Description: As a valuable resource for researchers, engineers, and practitioners, this special edition presents a balanced account of the scientific foundations together with the engineering and technological solutions that underpin the advancement and deployment of SiC-based power devices.
Edited by: Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
Online since: September 2024
Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).
Edited by: Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier and Prof. Dominique Planson
Online since: May 2022
Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Edited by: Prof. Peter Michael Gammon, Vishal A. Shah, Prof. Richard A. McMahon, Michael R. Jennings, Dr. Oliver James Vavasour, Faye Padfield and Prof. Philip Andrew Mawby
Online since: July 2019
Description: This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.
Edited by: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
Online since: May 2016
Description:

This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials
Edited by: Didier Chaussende and Gabriel Ferro
Online since: June 2015
Description: Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
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