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Silicon Carbide and Related Materials 2018
Subtitle:
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
Description:
This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.
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Info:
eBook:
ToC:
Editors:
Prof. Peter Michael Gammon, Vishal A. Shah, Prof. Richard A. McMahon, Michael R. Jennings, Dr. Oliver James Vavasour, Faye Padfield and Prof. Philip Andrew Mawby
THEMA:
TDP, TGM, TJ
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
3C-SiC, 4H-SiC, Bulk Growth, Characterization, Chemical Vapor Deposition (CVD), Defects, Dislocation, Epitaxial Growth, Ion Implantation, MOSFET, Oxide-Silicon Interface, Power Electronics, Processing, Semiconductor Devices, Silicon Carbide, Silicon Carbide (SiC), Silicon Carbide Polytypes, Wide Bandgap Semiconductor
Details:
Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Pages:
916
Year:
2019
ISBN-13 (softcover):
9783035713329
ISBN-13 (CD):
9783035723328
ISBN-13 (eBook):
9783035733327
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Ringgold Subjects:
Materials Science, Manufacturing, Electronics