Books by Keyword: Defects

Books

Edited by: Prof. Akihiko Fujiwara
Online since: October 2024
Description: This edition presents the compilation of research papers from the 8th International Conference on Materials Engineering and Nano Sciences (ICMENS 2024) and the 8th International Conference on Material Engineering and Manufacturing (ICMEM 2024), which were successfully held in Kwansei Gakuin University, Osaka, Japan, during March 22-25, 2024, to serve as a platform for experts, researchers, and practitioners from around the world to convene and exchange ideas and the latest advancements in materials science, mechanical engineering and construction. The book will be helpful to specialists in the mentioned branches of engineering practice.
Edited by: Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
Online since: September 2024
Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).
Edited by: Dr. Ramya Muthusamy and Thangaprakash Sengodan
Online since: January 2024
Description: Materials and technologies are significant elements for all kinds of high-tech industries that pave the road for advancements in the manufacturing area. With the rapid development of computer technologies, communications, and network technology, the traditional manufacturing process has evolved into intelligent, more technologically flexible and efficient manufacturing. This book is a collection of research articles on recent materials science, manufacturing technologies, and machine design advancements. The articles presented here were selected from the Fifth International Conference on Materials Science and Manufacturing Technology 2023 (ICMSMT 2023, April 13-14, 2023, Coimbatore, Tamil Nadu, India).
Edited by: Dr. Paul W. Mertens, Antoine Pacco, Kurt Wostyn and Quoc Toan Le
Online since: August 2023
Description: This proceedings volume contains the proceedings of all presentations of the 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2023. The subject matter of the UCPSS symposium is ultra-clean processing, isotropic selective etching and surface preparation technology in all steps of the fabrication of micro-and nano-electronic integrated circuits. This volume describes the recent progress in the field of ultra clean surfaces, surface cleaning and preparation for the production of micro- and nano-electronic integrated circuits and related subjects. This involves a wide variety of surfaces of mixed composition and with nano-topography. The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. This comprises different surface and cleaning steps throughout the entire device manufacturing process.
Edited by: Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier and Prof. Dominique Planson
Online since: May 2022
Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Edited by: Graeme E. Murch, Prof. Andreas Öchsner and Irina V. Belova
Online since: May 2020
Description: This volume of Diffusion Foundations is entitled Advances in Mass and Thermal Transport in Engineering Materials. The volume was designed to capture a very wide cross-section of research in the area in both experimental and modelling of mass and thermal transport and at both basic and applied levels. It is now very well recognized that the mass and thermal transport processes in engineering materials underpin much of the advance in the development of new materials and the improvement of existing materials. Whether it be the ongoing enhancement of the engineering properties of materials, the materials processing, the in-service longevity of materials or the recycling of materials, mass and thermal transport very frequently play direct and essential roles.
Edited by: Prof. Peter Michael Gammon, Vishal A. Shah, Prof. Richard A. McMahon, Michael R. Jennings, Dr. Oliver James Vavasour, Faye Padfield and Prof. Philip Andrew Mawby
Online since: July 2019
Description: This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.
Authors: Wolfgang Gräfe
Online since: March 2015
Description: This treatment of “Time-Dependent Mechanical Properties of Solids” beginswith a phenomenological description of the transport of some unspecifiedentity. It is assumed that the transport is caused by mechanical stresses ortemperature fields. Using these assumptions, it is possible to deduceformulae for a theoretically based description of several phenomena withoutreferring to any specific process or entity. These theoretical results thenprovide the tools for performing methodologically better scientific work andfor a better analysis of data in the practical application of materials. Bypublishing this work, the author hopes improve technical safety intransportation and other fields of practical materials application. Anothergoal is to stimulate the scientific investigation of a wider range ofsubstances in order to analyze more extensively the elementary processeswhich produce observed phenomena. This second edition is extended andChapter 12, five new Sections as well as the Appendices A7, A8 and A9 areadditionally inserted.
Edited by: Graeme E. Murch, Prof. Andreas Öchsner and Irina V. Belova
Online since: April 2014
Description: In the first chapter Prof. Kozubski and colleagues present atomistic simulations of superstructure transformations of intermetallic nanolayers. In Chapter 2, Prof. Danielewski and colleagues discuss a formalism for themorphology of the diffusion zone in ternary alloys. In Chapter 3, ProfessorsSprengel and Koiwa discuss the classical contributions of Boltzmann andMatano for the analysis of concentration-dependent diffusion. This isfollowed by Chapter 4 by Professor Cserháti and colleagues on the use of Kirkendall porosity for fabricating hollow hemispheres. In Chapter 5,Professor Morton-Blake reports on molecular dynamics calculations of ions ina synthetic channel. In Chapter 6, Professor Bokstein and Dr Rodin reviewgrain boundary diffusion and segregation in metals and alloys. This isfollowed by a review by Professor Mehrer on diffusion in glassy metals(Chapter 7). In Chapter 8 Professor Prochazka and colleagues report ondefects and sintering in yttria-stabilized zirconia using positronannihilation spectroscopy and in Chapter 9 Professor Fishman… and colleaguesreport on mechanical activation of Mn-O oxides. Finally in Chapter 10 Professors Popova and Popov analyse the role of diffusion in the structureand texture of Cu-Nb composites.
Edited by: Margita Longauerová and Pavol Zubko
Online since: April 2014
Description: Collection of selected, peer reviewed papers from the the International Symposium on Metallography (Metallography 2013), April 24–26, 2013, Stará Lesná, Slovak Republic.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 123 papers are grouped as follows: Invited Lectures,
I. Prediction, Process Simulation and Metallographic Methods,
II. Solidification and Solid State Transformation, III. Welding,
IV. Interrelationship between Microstructure and Material Properties,
V. Fractures, Defects and Material Degradation, VI. Fatigue and Creep,
VII. Nonferrous Alloys,
VIII. Powder Metallurgy, Composites, Ceramics, Superconductors and Metallic Glasses,
IX. Coatings and Nanomaterials,
X. Metallography in Archaeology (Archaeometallurgy)
Showing 1 to 10 of 19 Books