Selected peer-reviewed extended articles based on abstracts presented at the 21st International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)

Description:

Selected peer-reviewed extended articles based on abstracts presented at the 21 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024).

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978-3-0364-0264-2

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eBook:

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ToC:

Table of contents

Editors:

Prof. Victor Veliadis and Dr. Arash Salemi

DOI:

https://doi.org/10.4028/b-ny1FR8

THEMA:

TB, TBN, TJF, TJFC, TJFD

BISAC:

MED000000, TEC005000

Keywords:

Anneal, Applications, Basal Plane Dislocations, BJT, BPDs, Defect Characterization, Defects, Design, Device Physics, Diodes, Dislocations, Edge Termibnation, Epitaxy, Extended Defects, Gate Oxide, Graphite, Growth, Heated Implantation, High Voltage, Implantation, JBS, JFET, Material, Modules, MOS, MOSFET, Ohmic Contacts, Packaging, Pin, Planar MOSFET, Quantum Applications, Quantum Sensors, Reliability, Schottky Diode, SiC, Silicide, Silicon Carbide, Stacking Faults, Substrate, Superjunction, Threshold Voltage, Trench MOSFET, Wafers

Details:

Aggregated Book

Pages:

876

Year:

2025

ISBN-13 (softcover):

9783036402642

ISBN-13 (eBook):

9783036412641

Permissions:

Creative Commons CC BY 4.0

Ringgold Subjects:

Materials Science, Nanoscience, Electronics