Books by Keyword: Stacking Faults

Description: The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Description: Lanthanum hexaboride is useful because it possesses a high melting point (2210C), a low work function, one of the highest known electron emissivities, and is stable in vacuum. This volume summarises the extant data on the properties of this material, including the: bulk modulus, conductivity, crystal structure, Debye temperature, defect structure, elastic constants, electronic structure, emissivity, Fermi surface, hardness, heat capacity, magnetoresistance, reflectivity, resistivity, specific heat, surface structure, thermal conductivity, thermoelectric power, toughness and work function. The issue also includes original research papers on: the Pitting Resistance of 316 Stainless Steel in Ringer’s Solution, the Effect of Different Modifiers on the Microstructure and Strength of Locally Developed A356 Al-Si Alloy, the Site Preference of Zr in NiAl Dislocation Cores and its Effects on Bond Character, the Effect of Different Combinations of Salt Modifier on the Mechanical Properties and Microstructure of A356 Al-Si Alloy, Quasicrystalline Phase Formation in High Frequency Induction Melted Al80Cu14Fe6 Alloy, Numerical Investigation of the Effect of Sprue Base Design on the Flow Pattern of Aluminum Gravity Castings, the Evaluation of Surface Preparation Techniques for Steel Substrates Prior to Coating, Thermal Desorption of Hydrogen from AISI 316L Stainless Steel and Pure Nickel, Structural and Concentration Heterogeneities during the Formation of Silicide Phases in the Ti(5nm)/Ni(24nm)/Si(001)Thin-Film System, Studies of the g-Factor and Hyperfine Structure Constant for Ir4+ in CdO, Theoretical Studies of the Local Structures and Spin Hamiltonian Parameters for the Cu2+ Centers in Alkali Barium Borate Glasses, Study of the Properties of CR-39 Polymer Irradiated with Alpha Particles, Review of Diffusion and Interfacial Reactions in Sandwich Thin-Film Couples and the Correlation Coefficient between Vickers Hardness and Nuclear Techniques.

Description: Zinc oxide, already used millennia ago as a medicine and as an adjunct to brass production, has assumed a new importance in the modern world because of its native n-type semiconducting properties. It has, for instance, a relatively large (3.3eV) band-gap at room temperature. This leads to higher breakdown voltages, resistance to high electric fields, lower electronic noise and superior performance at high temperatures and powers. The band-gap can also be tailored by alloying with magnesium or cadmium oxides. The material exhibits other useful properties, such as a good transparency, a high electron mobility and a strong room-temperature luminescence; all of which are invaluable to the manufacture of the liquid-crystal displays of modern consumer goods. The present compilation comprises nearly 500 accounts of research on the diffusional behaviour of dopants and on the defects present in the wurtzite or zincblende structures. It is hoped that this handy compendium of data will be of value to those working on the tailoring of ZnO properties; especially with regard to the controversies concerning its doping behaviour.