The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

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Info:

eBook:

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ToC:

Table of contents

Editors:

Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio

DOI:

https://doi.org/10.4028/b-9Iwekh

THEMA:

PDT, TGM, TJ

BISAC:

SCI050000, TEC008000, TEC021000

Keywords:

Bias Temperature Instability, Bipolar Degradation, Device Lifetime, Dielectric Breakdown, Failure Analysis, Gate Oxide Degradation, Gate Switching Instability, High Power Electronics, Irradiation, Overload Protection, Reliability, Schottky Diode, SiC MOSFET, Silicon Carbide, Stacking Faults, Threshold Voltage Instability, Total Ionizing Dose

Details:

Special topic volume with invited peer-reviewed papers only

Pages:

134

Year:

2024

ISBN-13 (softcover):

9783036406473

ISBN-13 (eBook):

9783036416472

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Ringgold Subjects:

Materials Science, Electronics, Nanoscience