Books by Keyword: Irradiation

Description: This book aims to provide a comprehensive overview of the latest breakthroughs in Silicon Carbide (SiC) and related materials for the development of advanced solid-state electronics. Its scope systematically covers the entire semiconductor value chain, beginning with bulk and epitaxial growth, followed by rigorous defect evaluation and material characterization. Furthermore, the compiled research highlights critical advancements in dielectrics, interface engineering, and the design of high-performance SiC power devices. Reflecting the expanding horizons of the field, the content also explores emerging SiC-based quantum applications alongside thorough assessments of power module robustness and reliability. Ultimately, this collection serves as an essential resource for researchers and engineers dedicated to driving innovation in wide-bandgap semiconductors. All articles compiled in this edition were presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM, 14–19 September 2025, Busan, Korea).

Description: The appearance of solid-state silicon oxide high-power devices has been a cornerstone in the evolution of modern power electronics, enabling efficient processes of power conversion and power management in a wide array of applications. This special edition aims to provide engineers, researchers, and industry professionals with a deeper understanding of the challenges and solutions associated with maintaining the reliability and stability of solid-state high-power devices.

Description: This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.

Description: This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research.

Description: Continuing the scope of the preceding Conferences on Intergranular and Interphase Boundaries in Materials, the present conference focused on the atomic-level modeling of interfaces, the structural and chemical characterization of internal interfaces, on their thermodynamic, kinetic, mechanical, electrical, magnetic behavior and high-Tc superconductivity, and on the application of current knowledge to the design of polycrystalline materials having improved properties. Particular attention was paid to non-equilibrium segregation in irradiated materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Defect and Diffusion Forum Vols. 111-112

Description: The book presents our present understanding of the basic physical processes in irradiated metals. All papers have been reviewed prior to publishing.

Description: The purpose of this book is to provide a state-of-the-art picture of the field of radiation damage. It covers various topics extending from theoretical understanding of energy deposition and defect creation to industrial and nuclear applications.