Books by Keyword: Dislocations

Description: The presented journal volume of Engineering Chemistry includes articles that reflect the recent developments in chemical synthesis and properties analysis of materials for applications in electronics, chemical production, biofuel synthesis, effective crude oil transportation and corrosion protection. The volume will be helpful for many specialists in applied chemistry and chemical production.

Description: This special edition includes articles that reflected the latest research results in materials science, materials processing and geochemistry. The special issue will be helpful to many specialists in applied materials science and engineering chemistry.

Description: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.

Description: The presented special issue is devoted to the latest research in materials science and chemical technologies of materials synthesis and processing. This edition will be helpful to specialists engaged in optoelectronics, electronics and to chemical engineers whose activity is related to alternative energy generation and environmental protection.

Description:

Defects and diffusion are key concepts at the description of nuclear materials behavior at thermal and radiation impacts. The evolution of various defects (such as point defects, dislocations, grain boundaries) determines changes of the materials properties under operating conditions. The present issue contains new and relevant data about the diffusion and defects in nuclear fuel (uranium alloys, oxide and nitride fuel) and structural materials (steel and non-ferrous metals). We hope that this special issue will be useful for researchers and engineers working in the field of material science and nuclear engineering. We wish to thank the authors for their contributions to this special issue and reviewers for their cooperation and efforts to prepare and evaluate the manuscripts.

Description: Zinc oxide, already used millennia ago as a medicine and as an adjunct to brass production, has assumed a new importance in the modern world because of its native n-type semiconducting properties. It has, for instance, a relatively large (3.3eV) band-gap at room temperature. This leads to higher breakdown voltages, resistance to high electric fields, lower electronic noise and superior performance at high temperatures and powers. The band-gap can also be tailored by alloying with magnesium or cadmium oxides. The material exhibits other useful properties, such as a good transparency, a high electron mobility and a strong room-temperature luminescence; all of which are invaluable to the manufacture of the liquid-crystal displays of modern consumer goods. The present compilation comprises nearly 500 accounts of research on the diffusional behaviour of dopants and on the defects present in the wurtzite or zincblende structures. It is hoped that this handy compendium of data will be of value to those working on the tailoring of ZnO properties; especially with regard to the controversies concerning its doping behaviour.

Description: The nickel aluminide intermetallic is a particularly useful alloy for application at high temperatures because, unlike most materials, it exhibits the unusual property of becoming stronger with increasing temperature: depending upon the minor alloying additions, the 0.2% yield strength peaks at between 600 and 800C. The reason for this anomalous behaviour can be traced to the effect of the superlattice structure upon diffusional mass transfer and defect motion. The present volume contains a compilation (350 items, 176 pages) of data specifically covering the known diffusion and defect properties of this material.

Description: This treatment of “Time-Dependent Mechanical Properties of Solids” begins with a phenomenological description of the transport of some unspecified entity. It is assumed that the transport is caused by mechanical stresses or temperature fields. This hypothesis is based upon just a few well-established methods such as, for instance, the Zener theory of diffusion and the Inglis equation for stress enhancementof. Using these assumptions, it is possible to deduce formulae for a theoretically based description of several phenomena without referring to any specific process or entity.

Description: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.