Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices

Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices

Description:

The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.

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Info:

Editors:
Dr. Juraj Marek, Dr. Gregor Pobegen and Prof. Ulrike Grossner
THEMA:
TGB, TGM, TJ
BISAC:
TEC008000, TEC009070, TEC021000
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
152
Year:
2023
ISBN-13 (softcover):
9783036403328
ISBN-13 (eBook):
9783036413327
Permissions CCC:
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Ringgold Subjects:

Materials Science, Mechanical Engineering, Electronics