Books by Keyword: Point Defects

Description: Following the long tradition that started in 1987, the International Workshop on Positron Studies of Defects 2024 (PSD-24) will be held in Como, Italy, in the period from September the 1st to 6th, 2024. The aim of the workshop is to provide an opportunity for exchange of the latest results and scientific information concerning the positron interactions with solids and surfaces, the generation of slow positron beams and their applications.

Description: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.

Description: The presented special issue is devoted to the latest research in materials science and chemical technologies of materials synthesis and processing. This edition will be helpful to specialists engaged in optoelectronics, electronics and to chemical engineers whose activity is related to alternative energy generation and environmental protection.

Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.

Description: This volume is dedicated to the memory of Professor Dr. Nicolaas Augustinus Stolwijk whose works were related to the study of a wide spectrum of diffusion processes in metals, intermetallic compounds, semiconductors, solar grade silicon, polymer electrolytes and in minerals.

Description:

Defects and diffusion are key concepts at the description of nuclear materials behavior at thermal and radiation impacts. The evolution of various defects (such as point defects, dislocations, grain boundaries) determines changes of the materials properties under operating conditions. The present issue contains new and relevant data about the diffusion and defects in nuclear fuel (uranium alloys, oxide and nitride fuel) and structural materials (steel and non-ferrous metals). We hope that this special issue will be useful for researchers and engineers working in the field of material science and nuclear engineering. We wish to thank the authors for their contributions to this special issue and reviewers for their cooperation and efforts to prepare and evaluate the manuscripts.

Description: Collection of selected, peer reviewed papers from the International Conference on Diffusion in Materials (DIMAT 2014), August 17-22, 2014, Münster, Germany.
The 34 papers are grouped as follows:
Chapter 1: Reactions and Interdiffusion in Binary and Multicomponent Systems;
Chapter 2: Ion Transport;
Chapter 3: Defects, Stresses and Relaxation;
Chapter 4: Short-Circuit Diffusion;
Chapter 5: Diffusion Phenomena under Strong Gravitation;
Chapter 6: Diffusion-Related Phenomena;
Chapter 7: Advanced Methods of Diffusion Measurement

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from “Bulk growth” to “Device and application”. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm², 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.

Description: The oxidation of metals is, by definition, a reaction between a gas and a solid which usually produces a solid reaction product. At first glance, this would therefore seem to be a very simple process but, in fact, it is considerably more complex. One would like to think that the reaction product, i.e., the scale that forms on the metal, acts as a physical barrier between the reactants, and that the reaction should thus cease once the barrier is established. We know that this is unfortunately not the case, because transport of matter through the scale allows the reaction to continue. We also know that, because of density-differences between the metal and its oxide, the scale may not be sufficiently complete in coverage or may not adhere to the substrate because of cracking, spalling and detachment (wrinkling). In some extreme cases, the scale may even be a liquid which simply drips from the surface, or it may volatilize at operational temperatures. The reaction between a gas and a metal is truly very complicated.

Description: Defect and Diffusion Forum Vols. 111-112