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Silicon Carbide and Related Materials 2019
Subtitle:
Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
Description:
This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.
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Info:
eBook:
ToC:
Editors:
Dr. Hiroshi Yano, Prof. Takeshi Ohshima, Dr. Kazuma Eto, Dr. Shinsuke Harada, Dr. Takeshi Mitani and Dr. Yasunori Tanaka
THEMA:
PDT, TDP, TGM
BISAC:
SCI050000, TEC008000, TEC020000
Keywords:
Bipolar Devices, Characterization, Crystal Growth, Diode, Epitaxial Growth, Etching, Extended Defects, High Temperature Reliability, Integrated Circuit Packaging, Layer Growth, Measurements, Metal Oxide Semiconductor Field Effect Transistor, MOS Gate Stack, Point Defects, Quantum Technology, Schottky Barrier, Silicon Carbide, Silicon Carbide Power Devices, Thin Films, Wafer Machining
Details:
Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Pages:
1196
Year:
2020
ISBN-13 (hardcover):
9783035715798
ISBN-13 (CD):
9783035725797
ISBN-13 (eBook):
9783035735796
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Ringgold Subjects:
Materials Science, Manufacturing, Electronics