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Silicon Carbide and Related Materials 2019

Edited by: Dr. Hiroshi Yano, Prof. Takeshi Ohshima, Dr. Kazuma Eto, Dr. Shinsuke Harada, Dr. Takeshi Mitani and Dr. Yasunori Tanaka

Online since: July 2020

Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.