Books by Keyword: Diode

Description: The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Started in Washington, D.C. in 1987, the conference series developed into a bi-annual global forum on SiC from its crystal growth to the reliability in application. After five conferences in the U.S., ICSCRM has been held every two years, alternating between USA, Europe, and Japan. The last three Conferences were held in Giardini Naxos, Italy (2015), Washington, D.C. , USA (2017), and Kyoto, Japan (2019). Due to the pandemic situation in 2020 and 2021, the alternating European edition, the 13th ECSCRM, has been held in 2021, and the 19th ICSCRM has been postponed to 2022. The 19th edition of ICSCRM will be the last of its kind – starting in 2023, the conference series will be united with the European edition. It will form an annual event under the well-established name ICSCRM and a new rotation schedule integrating the SiC communities worldwide.

Description: This special edition contains a collection of articles on research results in areas of structural metal materials, materials and semiconductor devices for applications in photovoltaic systems and electronic devices based on silicon carbide, and also in the area of building materials. The special edition will be helpful to many specialists whose activity is related to machinery and construction, solar cell production and the electronic industry.

Description: This special issue includes articles devoted to the results of research and engineering developments in the area of silicon carbide semiconductor materials for power electronics and the latest materials for the construction sector. The special edition will be useful to engineers whose activity is related to research and development of power electronic devices and modern construction materials.

Description: This special edition contains a series of articles on research results in areas of materials for applications in opto- and microelectronics and power electronic devices based on silicon carbide. A part of the edition is devoted to properties investigation of green building materials with the use of some waste materials as replacements for conventional components. The issue will be helpful to many specialists whose activity is related to the electronic industry and green construction.

Description: This special edition contains a series of articles on research results in areas of structural metal materials, and materials for applications in opto- and microelectronics and power electronic devices based on silicon carbide. The presented edition will be helpful to many specialists whose activity is related to machinery and the electronic industry.

Description: These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.

Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.