Books by Keyword: Surface Defects

Description: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers.

Description: The presented special issue is devoted to the latest research in materials science and chemical technologies of materials synthesis and processing. This edition will be helpful to specialists engaged in optoelectronics, electronics and to chemical engineers whose activity is related to alternative energy generation and environmental protection.

Description: This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices.

Description: This collection of papers by results of the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016, 25-29 September, Halkidiki, Greece) reflects the latest progress in the field of wide bandgap semiconductors, focusing on silicon carbide. In addition, it covers some selected aspects in related materials like silicon, graphene, gallium oxide and III-nitrides.

Description: This volume contains the proceedings of 13^th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2016, Knokke, Belgium, September 12-14, 2016) (www.ucpss.org) and includes studies on cleaning such as particle removal using acoustic enhancement, removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying issues, control and measuring of contamination . FEOL and BEOL topics cover: chemistry of semiconductor surfaces, cleaning related to new gate stacks, cleaning at the interconnect level, selective wet etching, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning after Chemical-Mechanical-Polishing (CMP).

Description: Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium.
The 71 papers are grouped as follows:
Chapter 1: Cleaning for FEOL Applications,
Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area,
Chapter 3: Wet Etching for FEOL Applications,
Chapter 4: Wet Processing of High Aspect Ratio Structures,
Chapter 5: Fluid Dynamics, Cleaning Mechanics,
Chapter 6: Photo Resist Performance and Rework,
Chapter 7: Cleaning for BEOL Interconnect Applications,
Chapter 8: Cleaning for 3D Applications,
Chapter 9: Contamination Control and AMC,
Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells

Description: The nickel aluminide intermetallic is a particularly useful alloy for application at high temperatures because, unlike most materials, it exhibits the unusual property of becoming stronger with increasing temperature: depending upon the minor alloying additions, the 0.2% yield strength peaks at between 600 and 800C. The reason for this anomalous behaviour can be traced to the effect of the superlattice structure upon diffusional mass transfer and defect motion. The present volume contains a compilation (350 items, 176 pages) of data specifically covering the known diffusion and defect properties of this material.

Description: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.