This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices.

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eBook:

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ToC:

Table of contents

Editors:

Robert Stahlbush, Dr. Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Prof. Michael Dudley and Aivars J. Lelis

DOI:

https://doi.org/10.4028/b-6154cD

THEMA:

TDP, TGM, TJ

BISAC:

TEC008000, TEC020000, TEC021000

Keywords:

Applications, Bulk and Epitaxial Growth, Circuits, MOS and MOSFET Structures, Power Devices, Processing, Properties, Semiconductors, Silicon Carbide, Surface Defects

Details:

Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA

Pages:

1042

Year:

2018

ISBN-13 (softcover):

9783035711455

ISBN-13 (CD):

9783035721454

ISBN-13 (eBook):

9783035731453

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Ringgold Subjects:

Materials Science