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HomeMOS and MOSFET Structures

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Silicon Carbide and Related Materials 2017

Edited by: Robert Stahlbush, Dr. Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Prof. Michael Dudley and Aivars J. Lelis

Online since: June 2018

Description: This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices.