Books by Keyword: MOS

Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Description: This collection of papers by results of the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016, 25-29 September, Halkidiki, Greece) reflects the latest progress in the field of wide bandgap semiconductors, focusing on silicon carbide. In addition, it covers some selected aspects in related materials like silicon, graphene, gallium oxide and III-nitrides.

Description:

This volume collects the papers from the 16^th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials

Description: Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials

Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.