Main Themes by Keyword: MOS

Main Themes

Volumes
Edited by: Didier Chaussende and Gabriel Ferro
Online since: June 2015
Description: Collection of selected, peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials

821-823

Edited by: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
Online since: May 2016
Description:

This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials

858

Edited by: Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
Online since: May 2017
Description: This collection of papers by results of the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016, 25-29 September, Halkidiki, Greece) reflects the latest progress in the field of wide bandgap semiconductors, focusing on silicon carbide. In addition, it covers some selected aspects in related materials like silicon, graphene, gallium oxide and III-nitrides.

897

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