Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)

Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

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eBook:

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ToC:

Table of contents

Editors:

Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier and Prof. Dominique Planson

DOI:

https://doi.org/10.4028/b-5Qzz38

THEMA:

PDT, TGM, TJ

BISAC:

SCI050000, TEC008000, TEC021000

Keywords:

3C-SiC, 4H-SiC, Bulk Growth, Characterization, Chemical Vapor Deposition (CVD), Defects, Dislocation, Epitaxial Growth, Graphene, III-Nitrides, Ion Implantation, MOS, MOSFET, Oxide-Silicon Interface, Power Electronics, Processing, Semiconductor Devices, Silicon Carbide, Silicon Carbide (SiC), Silicon Carbide Polytypes, Wide Bandgap Semiconductor

Details:

Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), October 24-28, 2021, Tours, France

Pages:

728

Year:

2022

ISBN-13 (softcover):

9783035727609

ISBN-13 (eBook):

9783035738247

Permissions:

Creative Commons CC BY 4.0

Ringgold Subjects:

Materials Science, Electronics, Nanoscience