Books by Keyword: Semiconductor Devices

Description: The presented book includes articles on research results in the area of semiconductors based on silicon carbide, gallium nitride and related materials that are widely used today for the production of power solid-state electronic devices. The recent technologies of crystal growth and wafer production and processing techniques, properties of completed semiconductor solid-state structures and devices circuitry, including their applications in sensors, mechatronics, and quantum systems, are explored and analysed in this edition. The book will be valuable to engineers and researchers whose activity is related to the development and production of solid-state electronics. The collected here articles were presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023, 17-22 September 2023, Sorrento, Italy).

Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Description: This volume contains selected papers from the 12^th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.

Description: Journal issue