Books by Keyword: Gate Oxide

Description: This book aims to provide a comprehensive overview of the latest breakthroughs in Silicon Carbide (SiC) and related materials for the development of advanced solid-state electronics. Its scope systematically covers the entire semiconductor value chain, beginning with bulk and epitaxial growth, followed by rigorous defect evaluation and material characterization. Furthermore, the compiled research highlights critical advancements in dielectrics, interface engineering, and the design of high-performance SiC power devices. Reflecting the expanding horizons of the field, the content also explores emerging SiC-based quantum applications alongside thorough assessments of power module robustness and reliability. Ultimately, this collection serves as an essential resource for researchers and engineers dedicated to driving innovation in wide-bandgap semiconductors. All articles compiled in this edition were presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM, 14–19 September 2025, Busan, Korea).

Description: This special edition presents the results of an evaluation of silicon carbide (SiC) based power device performance and is intended as a valuable resource for researchers, engineers, and graduate students engaged in power semiconductor development and their reliability analysis.

Description: This special edition explores the broad spectrum of phenomena that govern the functionality, performance, and reliability of SiC-based devices under demanding exploitation conditions and quantum applications. The presented research results will serve as a valuable resource for researchers, engineers, and graduate students working at the intersection of wide-bandgap semiconductors, quantum technologies, and radiation-hardened electronics.

Description: This special edition provides a comprehensive perspective on engineering research results and technological solutions in the area of charge-transport across interfaces and contacts in SiC devices and is intended for researchers, process engineers, and graduate students engaged in the development of next-generation wide-bandgap electronics.

Description: Selected peer-reviewed extended articles based on abstracts presented at the 21 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024).

Description: This special edition provides a comprehensive overview of the latest process enhancements that underpin the continued advancement of SiC-based device technologies by addressing methods of compound semiconductor processing and technologies of electronics device structure forming with a focus on end-device reliability.