Interface, Dielectrics and Ohmic Contact in SiC Power Devices

Interface, Dielectrics and Ohmic Contact in SiC Power Devices

Description:

This special edition provides a comprehensive perspective on engineering research results and technological solutions in the area of charge-transport across interfaces and contacts in SiC devices and is intended for researchers, process engineers, and graduate students engaged in the development of next-generation wide-bandgap electronics.

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Info:

ToC:
Table of contents
Editors:
Sang Mo Koo and Hoon Kyu Shin
DOI:
https://doi.org/10.4028/b-e8AH67
THEMA:
PDT, TJF, TJFC, TJFD
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
Annealing Temperature, Atomic Layer Deposition, Backside Contact Resistance, Chemical Vapour Deposition, CMOS, Contact End Resistance, Contact Front Resistance, Contact Length, Contact Resistivity, Decoupled Plasma Nitridation, Gate Dielectric, Gate Interface, Gate Oxide, Gate Stacks, Interface, Interface Optimisation, Laser Annealing, MOS Capacitor, Ohmic Contact, Schottky Contact, SiC MOSFET, Silicon Carbide, Surface Conditioning, Trench MOSFET
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
116
Year:
2026
ISBN-13 (softcover):
9783036421292
ISBN-13 (eBook):
9783036431291
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Ringgold Subjects:

Materials Science, Manufacturing, Electronics