Books by Keyword: MOS Capacitor

Books

Edited by: Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
Online since: August 2024
Description: The development of solid-state semiconductor structures is at the forefront of technological innovation, driving advancements across various applications of microelectronics and high-power devices. The formation and processing of semiconductor solid-state structures involve a series of sophisticated and precision technologies that improve functionality and provide integration of finished components into complex circuits. This special edition is an essential resource for engineers and researchers involved in developing and applying semiconductor technologies.
Edited by: Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
Online since: August 2024
Description: The processing and properties analysis of semiconductor structures are standing at the cutting edge of technological innovation, propelling advancements in the production of solid-state electronics. These technologies require a range of sophisticated and precise operations and are crucial in modifying materials to achieve the desired electrical characteristics of completed structures. The presented special edition will be an invaluable resource for engineers and researchers involved in the development in the area of semiconductor technologies.
Edited by: Yichen Liu, Heng Yu Xu and Ying Xi Niu
Online since: October 2023
Description: Full-text papers selected by peer review from the submissions to the Asia Pacific Conference on Silicon Carbide and Related Materials (APCSRM 2022, November 14-16, 2022, Xuzhou, China) and presented in this book cover cutting-edge research on silicon carbide and related materials in the direction of materials, devices, and applications.
Edited by: Anton J. Bauer, Peter Friedrichs, M. Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Online since: April 2010
Description: The 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) was held at the Congress Center, Nürnberg (CCN), Germany from October 11 to 16, 2009. This was a truly important and exciting event in the history of wide-bandgap semiconductors, as 503 scientists and engineers from 29 countries reported and discussed the progress made during the previous two years.
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