Silicon Carbide and Related Materials 2009

Review from Ringgold Inc., ProtoView: ICSCRM 2009 (the 13th International Conference on Silicon Carbide and Related Materials) was held in October, in Nünberg, Germany. This two-volume set contains 331 contributed and 28 invited papers reflecting, as stated in the preface, current "knowledge and industrial experience on the growth of bulk crystals and epitaxial layers, the physical properties of the grown semiconductors as well as the progress in processing and fabrications of SiC high power devices." Particularly high-interest topics at the conference (as identified in the preface) included extended defects like dislocations of stacking faults (given that micropipes can now be avoided almost entirely in SiC wafers); the development and fabrication of high power devices and systems for industrial applications (commercial aspects of SiC technology merited a dedicated news session); and graphene grown on SiC (this subject generated considerable excitement and filled three oral sessions). Contributions are arranged thematically. A keyword index offers readers a degree of aid for navigating the contents.