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Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.

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eBook:

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ToC:

Table of contents

Editors:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

DOI:

https://doi.org/10.4028/b-3CJqL1

THEMA:

TGM

BISAC:

TEC021000

Keywords:

4H-SiC, Carbide Silicon (SiC), Chemical Vapor Deposition (CVD), Epitaxial Growth, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Photoluminescence (PL)

Details:

Proceedings of the 5th Euopean Conference on Silicon Carbide and Related Materials, August 31 - September 4, 2004, Bologna, Italy

Pages:

1148

Year:

2005

ISBN-13 (hardcover):

9780878499632

ISBN-13 (CD):

9783035719291

ISBN-13 (eBook):

9783038130031

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