Books by Keyword: Carbide Silicon (SiC)

Books

Edited by: Di Zhang, Jingkun Guo and Chi Y. A. Tsao
Online since: October 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Composites have long held the center-stage of research and development in the materials community. The concept of combining metals, ceramics and polymers – having various types, shapes and properties - into a single material exhibiting properties that none of its individual components possess, has created endless scope for the imagination of scientists and engineers. It has ignited numerous fields of research and development, and revolutionized many applications. However, in spite of the many advantages of composite materials, there remain troubling underlying problems arising from the complexity of the systems, and these have hindered their full exploitation in everyday life. Such challenges to the composite materials community have been the driving force for holding composite materials conferences such as the celebrated Cross-Strait ones.
Edited by: A.R. Boccaccini, O. Van der Biest and R. Clasen
Online since: July 2006
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection focuses solely on the topic of electrophoretic deposition (EPD) and its application as a processing technique for the fabrication of both traditional and new materials. Papers describing the widest possible range of applications of EPD are included; thus reflecting the amazing versatility of the technique. The topics range from theoretical studies of the fundamental mechanisms of EPD, to novel technological developments of EPD for the low-cost fabrication of a variety of materials.
Edited by: Hai-Doo Kim, Hua-Tay Lin and Michael J. Hoffmann
Online since: June 2005
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Significant progress has been made over the past 30 years in handling silicon-based ceramics such as silicon nitride, silicon carbide, SiAlON, silicides and composites. A better understanding of processing parameters in various forming techniques, and of microstructure-property relationships, has led to substantial improvements in thermomechanical performance and reliability; as well as in cost reduction.
Edited by: Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Online since: May 2005
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Edited by: Peder Bergman and Erik Janzén
Online since: September 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.
Edited by: Hiroshige Suzuki, Katsutoshi Komeya and Mototsugu Sakai
Online since: August 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Ceramics promise to be one of the leading materials in the 21st century; with their enormous potential to play essential roles in the important and expanding fields of nano-science and technology, information technology, ecological science and engineering, energy-related engineering and life sciences.
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