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Silicon Carbide and Related Materials - 1999
Description:
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
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Info:
eBook:
ToC:
Editors:
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
THEMA:
TGM
BISAC:
TEC021000
Keywords:
4H-SiC, 6H-SiC, Annealing, Chemical Vapor Deposition (CVD), Deep Level, Defect, Doping, Epitaxial Growth, Interface, Interface States (or Traps), Ion Implantation, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Micropipe, Ohmic Contact, Photoluminescence (PL), Polytype, Schottky Diode, Silicon Carbide (SiC), Sublimation Growth, TEM
Details:
Proceedings of the International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, Oct. 10-15, 1999
Pages:
1786
Year:
2000
ISBN-13:
9780878498543
ISBN-13 (CD):
9783038598671
ISBN-13 (eBook):
9783035705515
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