Books by Keyword: 6H-SiC

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: This periodical edition includes peer-reviewed scientific and engineering papers on all aspects of research in the area of nanoscience and nanotechnologies and wide practical application of the achieved results.

Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.

Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.