Books by Keyword: Micropipe

Description: This special edition provides a focused overview of the state of the art in the areas of control, analysis of characteristics, and effect compensation of silicon carbide structure defects, highlighting the scientific foundations and technological solutions that underpin the development of high-quality SiC devices.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters.

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.

Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.