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This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.

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eBook:

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ToC:

Table of contents

Editors:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

DOI:

https://doi.org/10.4028/b-37Li94

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Annealing, Atomic Force Microscope (AFM), Chemical Vapor Deposition (CVD), Defect, Dislocation, Epitaxy, Gallium Nitride (GaN), Interface States (or Traps), Ion Implantation, MBE, MESFET, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Micropipe, Ohmic Contact, Photoluminescence (PL), Polytype, Raman Scattering, Silicon Carbide (SiC), TEM, X-Ray Diffraction (XRD)

Details:

Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Stockholm, Sweden, September 1997

Pages:

1606

Year:

1998

ISBN-13:

9780878497904

ISBN-13 (CD):

9783038598411

ISBN-13 (eBook):

9783035705256

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