Description: The present publication comprises the proceedings of the 10th International Summer School on Crystal Growth. It is an excellent introduction to the main features of the science and technology of crystal growth.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Silicon Carbide, III-Nitrides and Related Materials

Edited by: G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Online since: February 1998

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.

Advances in Crystal Growth

Edited by: A.M. Mancini, C. Paorici and M.L. Terranova

Online since: February 1996

Description: The field of crystal growth has developed steadily with the rapid progress in microelectronics. The purpose of this book is to present a survey of the most recent results related to this subject area. The book will serve as both an up-to-date review for experts and as a reference work on crystal growth for younger scientists and for those who wish to keep track of the advances and technological trends in the field.