By integrating technological features of crystal and epitaxial layer growth, physics of defect occurrence processes and procedures for eliminating their effects, and device engineering, this edition provides a comprehensive overview of the current state of research and existing approaches to mitigating defect-related limitations in SiC-based technologies.

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978-3-0364-0918-4

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eBook:

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ToC:

Table of contents

Editors:

Prof. Victor Veliadis and Dr. Arash Salemi

DOI:

https://doi.org/10.4028/b-WRnXO7

THEMA:

TBN, TGM, TJFD

BISAC:

TEC008000, TEC020000, TEC021000

Keywords:

Basal Plane Dislocation, Bipolar Degradation, Defect Density, Defect Inspection, Defect Reduction, Electrical Wafer Sorting, Epitaxial Defectivity, Lattice Damage, Prismatic Dislocation, Silicon Carbide, Structure Defect

Details:

Special topic volume with invited peer-reviewed papers only

Pages:

Year:

2025

ISBN-13 (softcover):

9783036409184

ISBN-13 (eBook):

9783036419183

Permissions:

Creative Commons CC BY 4.0

Ringgold Subjects:

Materials Science, Manufacturing, Electronics