Books by Keyword: Silicon Carbide

Description: This special edition contains a series of articles on research results in areas of structural metal materials, and materials for applications in opto- and microelectronics and power electronic devices based on silicon carbide. The presented edition will be helpful to many specialists whose activity is related to machinery and the electronic industry.

Description: The special edition includes articles that represented the latest research results and engineering solutions in the synthesis of nanomaterials, analysis processes of semiconductor wafer fabrication, and some decisions on coatings and exploration of tribological performance of several polymer and composite materials. This special edition will be interesting to specialists in nanomaterials synthesis, semiconductor power device production and protective coatings in machinery.

Description: The 2021 3rd Asia Conference on Material and Manufacturing Technology, the 2021 5th International Conference on Advanced Manufacturing and Materials and the 12th International Conference on Manufacturing Science and Technology were successfully held via an online platform and collected articles on materials and manufacturing which will promote scientific and engineering findings as well as new products and technologies. Selected contributions introduce readers to the last research results and engineering solutions in materials science and technologies of materials synthesis and processing.

Description: Articles collected in this issue present to readers the results of applied nano research. The various nanoparticles were studied and analysed for applications in microelectronics, sensors, biosensors, and devices for energy storage and conversion. The properties of structural nanocomposites based on graphene and nano cellulose were considered in some articles. There was also an analysis of the use of nanomaterials in archaeological object restoration. This volume will be helpful to specialists in nanomaterials and nanotechnologies applications.

Description:

This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.

Description: Modern structural and functional materials are essential for modern production and engineering and the cutting edge production technologies require application of the improved materials to achieve the intended results necessary for progress and development in the said industries. For that purpose, research and analysis of such materials and their properties are crucial as they help to understand how the materials perform under different conditions and improve their characteristics in accordance with the intended targets. Corrosion resistance and analysis of materials damage state and durability, methods of green synthesis functional nanoparticles, properties and application of shape memory alloys, and analysis of the possibility of the application the abrasive waterjet garnet wastes in concrete production are the main topics related to the materials properties research that are presented to the readers. This will be helpful for specialists in materials science from many production branches, including construction and engineering.

Description: This volume contains papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), held in Kyoto, Japan, from September 29 through October 4, 2019. The collection reflects the results of the last research efforts on properties of silicon carbide and related materials for the goal of their use in power electronics. Presented articles, cover the wide range of topics: crystal growth and wafer manufacturing, characterization and defect engineering, MOS gate stacks and device processing, power devices, and integrated circuits packaging.

Description: This volume contains selected papers from the 12^th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.

Description: The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga₂O₃, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.

Description: This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices.