Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules

Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules
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Description:

This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.

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ToC:
Table of contents
Editors:
Sang Mo Koo and Hoon Kyu Shin
DOI:
https://doi.org/10.4028/b-hs7Rro
THEMA:
PDT, TJF, TJFD
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
Bias Temperature Instability, Device Reliability, Dynamic Reverse Bias Stress, Extreme Bias Conditions, Gate Oxide Stability, Gate Switching Instability, Gate Switching Stress, High Temperature Gate Bias Stress (HTGB), Humidity-Induced Degradation, Lifetime Modelling, Long-Term Reliability, Power Cycling Capability, Power Cycling Test, Power Module, Short-Circuit Robustness, SiC MOSFET, Silicon Carbide, Switch Transients, Threshold Voltage Degradation, Time-Dependent Dielectric Breakdown
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
160
Year:
2026
ISBN-13 (softcover):
9783036421339
ISBN-13 (eBook):
9783036431338
Permissions:
Creative Commons CC BY 4.0
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Ringgold Subjects:

Materials Science, Manufacturing, Electronics