Design of SiC Power Devices

Design of SiC Power Devices

Description:

The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

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Info:

ToC:
Table of contents
Editors:
Sang Mo Koo and Hoon Kyu Shin
DOI:
https://doi.org/10.4028/b-b2SShW
THEMA:
PDT, TJF, TJFC, TJFD
BISAC:
TEC008000, TEC020000, TEC021000
Keywords:
Bidirectional Power Switch, Capacitance-Voltage Measurements, Edge Termination, Electrical Characteristics, Gate Turn-Off Thyristors, High-Frequency Switching, Junction Barrier Schottky (JBS), Junction Termination Extension, Leakage Characteristics, On-State Characteristics, P-Well Boosting, P-Well Doping, SiC MOSFET, Silicon Carbide, Technology Computer-Aided Design (TCAD), Trench MOSFET, Tunneling Transistor
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
110
Year:
2026
ISBN-13 (softcover):
9783036421315
ISBN-13 (eBook):
9783036431314
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Ringgold Subjects:

Materials Science, Manufacturing, Electronics