Books by Keyword: Edge Termination

Description: The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).