Books by Keyword: SOI

Description: This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The emphasis of this special collection of 55 peer-reviewed papers was on NEMS/MEMS and microTAS. Particular attention was paid to applications that involve MEMS design, modelling, fabrication processes, lab-on-a-chip and biophotonic medical devices. The volume also explores new devices and processes, innovations and engineering applications; especially those related to NEMS/MEMS technologies and devices. A very useful guide to this highly specialized topic.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon ultra-large scale integrated circuits (ULSIs) are now faced with various physical limits to further scaling. Therefore, it is very important to establish the fundamental science and technology required to produce nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) having high performance, new functionalities and larger-scale integration. The scope of this book covers: - Nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS), - Novel functional devices, materials, and nanoprocessing technologies, - Nano-bio physics and technologies for future nano devices, - Variability control technologies and Signal integrity. This makes it a very useful handbook on the subject.

Description: Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging and is still a field ripe for further development.