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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 183-185Electronic State, Atomic Configuration and Local...

Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon

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Defects and Diffusion in Semiconductors III

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Periodical:

Defect and Diffusion Forum (Volumes 183-185)

Pages:

25-40

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.183-185.25

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Online since:

August 2000

Authors:

Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

Keywords:

Carbon, Charge State, DLTS, Energy Levels, Hydrogen, Local Motion, Stress

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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