Process-Induced Defects and Optical Memory in Gallium Nitride

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Periodical:

Defect and Diffusion Forum (Volumes 186-187)

Edited by:

D.J. Fisher

Pages:

61-70

DOI:

10.4028/www.scientific.net/DDF.186-187.61

Citation:

R. Cheung et al., "Process-Induced Defects and Optical Memory in Gallium Nitride", Defect and Diffusion Forum, Vols. 186-187, pp. 61-70, 2000

Online since:

December 2000

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$35.00

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