Layer-Growth of Tantalum Nitrides by Nitridation of Ta Metal: the Basis of the Preparation of a Well-Characterised Nitrogen Standard Material

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Edited by:

Y. Limoge and J.L. Bocquet

Pages:

1613-1618

DOI:

10.4028/www.scientific.net/DDF.194-199.1613

Citation:

M. Dopita et al., "Layer-Growth of Tantalum Nitrides by Nitridation of Ta Metal: the Basis of the Preparation of a Well-Characterised Nitrogen Standard Material", Defect and Diffusion Forum, Vols. 194-199, pp. 1613-1618, 2001

Online since:

April 2001

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