Interaction of Point Defects with Extended Defects in the Si-SiO2 System during its Formation Process

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Edited by:

Y. Limoge and J.L. Bocquet

Pages:

1737-1744

DOI:

10.4028/www.scientific.net/DDF.194-199.1737

Citation:

D. Kropman et al., "Interaction of Point Defects with Extended Defects in the Si-SiO2 System during its Formation Process", Defect and Diffusion Forum, Vols. 194-199, pp. 1737-1744, 2001

Online since:

April 2001

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$35.00

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