Paper Titles

Anelastic Relaxation at 400K in Pr_1-xCa_xMnO₃ Manganite
p.151

Ultrasonic Propagation in, and Elastic Constants of, BaY₂F₈ Single Crystals
p.155

High-Temperature Internal Friction and Diffusion in Y₂O₃- and CaO-Stabilised ZrO₂
p.159

Mechanical Loss in 3mol%Yttria-Doped Tetragonal Zirconia Polycrystals (3Y-TZP)
p.163

Internal Friction Peak in Silicon Nitride Sintered without Additives
p.167

Dissipated Energy in Dry and Wet Plasters
p.171

Modifications of an Internal Friction Apparatus for the Study of Dislocation Motion in Semiconductors
p.175

Mechanical Spectroscopy of Pure and Fe-Doped InP Films on Silicon Cantilevers
p.179

Frequency-Dependent Elastic Compliances and Stiffnesses of Some Solids
p.183

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 206-207Modifications of an Internal Friction Apparatus...

Modifications of an Internal Friction Apparatus for the Study of Dislocation Motion in Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects and Diffusion in Ceramics IV

Info:

Periodical:

Defect and Diffusion Forum (Volumes 206-207)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.206-207.175

Citation:

Cite this paper

Online since:

July 2002

Authors:

T. Tondellier, J. Woirgard, Jean Luc Demenet

Keywords:

Dislocation, Internal Friction, Semiconductor, Vibrating Reed

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: