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Abstracts
Growth Kinetics of Dislocation Loops in Irradiated Ceramic Materials
a.783
Electron Beam Doping of Semiconductors by Superdiffusion
a.784
Glissile Interstitial Clusters and Self-Organization in Irradiated Materials
a.785
Elimination of Irradiation Point Defects from Crystalline Solids
a.786
γ-Radiation and the Annealing of Radiation Defects in MOS Structures
a.787
Bombardment-Induced Post-Cascade Redistribution of Point Defects
a.788
Motion of Interstitial Defects in Irradiated Materials
a.789
Grain Boundary Structural Changes under Electron Irradiation
a.790
Migration of Laser-Induced Point Defects in IV–VI Compounds
a.791
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors VIMigration of Laser-Induced Point Defects in IV–VI...

Migration of Laser-Induced Point Defects in IV–VI Compounds

Page: A791

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