Defect and Diffusion Forum Vols. 221-223

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https://doi.org/10.4028/www.scientific.net/DDF.221-223

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Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon

Authors: Vladimir P. Markevich, B. Hourahine, R.C. Newman, R. Jones, Mats Kleverman, J. Lennart Lindström, L.I. Murin, Masashi Suezawa, Sven Öberg, Patrick R. Briddon

New Approach to Capacitance Studies of 'DX' Centers

Authors: L. Dózsa

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Authors: Takao Wada, Hiroshi Fujimoto

Modeling of Dopant and Defect Interactions in Si Process Simulators

Authors: Lourdes Pelaz, Luis Alberto Marqués, María Aboy, Juan Barbolla

Spectroscopic Study of Magnesium-Related Impurities in Silicon

Authors: L.T. Ho

Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation

Authors: Ferenc Riesz

Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors

Authors: M. Kuzma

A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism

Authors: A. Benmakhlouf

In-Diffusion Concentration Profiles of Dopants in Semiconductors

Authors: E. Antoncik

109

Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy

Authors: B. Pivac, A. Sassella, A. Borghesi

123