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Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
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New Approach to Capacitance Studies of 'DX' Centers
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Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
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Modeling of Dopant and Defect Interactions in Si Process Simulators
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Spectroscopic Study of Magnesium-Related Impurities in Silicon
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Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
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Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
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In-Diffusion Concentration Profiles of Dopants in Semiconductors
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 221-223Stable Hydrogen Pair Trapped at Carbon Impurities...

Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon

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Defects and Diffusion in Semiconductors VI

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Pages:

1-10

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.221-223.1

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Online since:

November 2003

Authors:

Vladimir P. Markevich, B. Hourahine, R.C. Newman, R. Jones, Mats Kleverman, J. Lennart Lindström, L.I. Murin, Masashi Suezawa, Sven Öberg, Patrick R. Briddon

Keywords:

Absorption Band, Carbon, Hydrogen, Impurity Complexes, Silicon

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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