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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 221-223New Approach to Capacitance Studies of 'DX'...

New Approach to Capacitance Studies of 'DX' Centers

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Defects and Diffusion in Semiconductors VI

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Pages:

11-22

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.221-223.11

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Online since:

November 2003

Authors:

L. Dózsa

Keywords:

Capacitance Transients, DLTS Simulation, DX Centers

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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