Modeling of Dopant and Defect Interactions in Si Process Simulators

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Periodical:

Defect and Diffusion Forum (Volumes 221-223)

Edited by:

D.J. Fisher

Pages:

31-40

DOI:

10.4028/www.scientific.net/DDF.221-223.31

Citation:

L. Pelaz et al., "Modeling of Dopant and Defect Interactions in Si Process Simulators ", Defect and Diffusion Forum, Vols. 221-223, pp. 31-40, 2003

Online since:

November 2003

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$35.00

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